It is a copper-clad ceramic substrate based on dense silicon nitride (Si₃N₄) ceramic. Copper foil is bonded onto the ceramic substrate mainly via AMB (Active Metal Brazing) technology.

With outstanding fracture toughness and thermal shock resistance, matched coefficient of thermal expansion with SiC chips, high voltage insulation and moderate thermal conductivity, it serves as the core insulating & heat-dissipating carrier for high-power semiconductor modules, widely used in 800V EV inverters, energy storage converters and rail transit power electronics.

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